DMTH12H007SPS Series

120V 175°C N-Channel Enhancement Mode MOSFET

Catalog

120V 175°C N-Channel Enhancement Mode MOSFET

Part	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case
Diodes Inc DMTH12H007SPS-13	8.9 mOhm	Surface Mount	84 A	3.5 W	3142 pF	44 nC	N-Channel	MOSFET (Metal Oxide)	120 V	20 V	PowerDI5060-8	4 V	-55 °C	175 ░C	6 V 10 V	8-PowerTDFN

Catalog

120V 175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• Thermally Efficient Package – Cooler Running Applications

• High Conversion Efficiency

• Low RDS(ON) – Minimizes On-State Losses

• <1.1mm Package Profile – Ideal for Thin Applications

• Lead-Free Finish; RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• For automotive applications requiring specific change control(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, andmanufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.