MOSFET N-CH 650V 32A TO247
| Part | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | FET Type | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Supplier Device Package | Rds On (Max) @ Id, Vgs | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 10 V | 650 V | N-Channel | 5.5 V | 54 nC | 500 W | TO-247 (IXTH) | 135 mOhm | TO-247-3 | 2205 pF | -55 °C | 150 °C | 30 V | 32 A | Through Hole | MOSFET (Metal Oxide) |