MOSFET N-CH 40V 120A 8DSOP
| Part | Mounting Type | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Package / Case | Drain to Source Voltage (Vdss) | FET Type | Vgs(th) (Max) @ Id | Operating Temperature | Technology | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage TPW1R104PB,L1XHQ | Surface Mount | 132 W, 960 mW | 6 V, 10 V | 20 V | 120 A | 55 nC | 4560 pF | 8-DSOP Advance | 8-PowerVDFN | 40 V | N-Channel | 3 V | 175 °C | MOSFET (Metal Oxide) | 1.14 mOhm |