TPW1R104 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
MOSFET N-CH 40V 120A 8DSOP
| Part | Technology | Gate Charge (Max) | Package Name | Power Dissipation (Max) | Vgs(th) (Max) | Qualification | Current - Continuous Drain (Id) (Ta) | Input Capacitance (Ciss) (Max) | FET Type | Operating Temperature | Drain to Source Voltage (Vdss) | Rds On (Max) | Grade | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Vgs (Max) | Package / Case | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | 55 nC | 8-DSOP Advance | 132 W 960 mW | 3 V | AEC-Q101 | 120 A | 4560 pF | N-Channel | 175 °C | 40 V | 1.14 mOhm | Automotive | 6 V | 10 V | 20 V | 8-PowerVDFN | Surface Mount |