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MOSFET N/P-CH 30V 6.5A 8SOIC
| Part | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | FET Feature | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Package / Case [y] | Package / Case [x] | Rds On (Max) @ Id, Vgs | Power - Max [Max] | Drain to Source Voltage (Vdss) | Technology | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Configuration | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 3 V | -55 °C | 150 °C | Logic Level Gate | 650 pF | 33 nC | 8-SOIC | 3.9 mm | 0.154 in | 29 mOhm | 2 W | 30 V | MOSFET (Metal Oxide) | 8-SOIC | 4.9 A 6.5 A | N and P-Channel | Surface Mount |