GAP3SLT33 Series

Catalog

DIODE SIC 3.3KV 300MA TO220FP

Part	Mounting Type	Current - Reverse Leakage	Package / Case	Voltage - Forward (Vf) (Max)	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Package Name	Technology	Capacitance
GeneSiC Semiconductor GAP3SLT33-220FP	Through Hole	5 µA	TO-220-2 Full Pack	1.7 V	3300 V	300 mA	175 °C	-55 °C	TO-220FP	SiC (Silicon Carbide) Schottky	42 pF
GeneSiC Semiconductor GAP3SLT33-214	Surface Mount	10 µA	DO-214AA SMB	2.2 V	3300 V	300 mA	175 °C	-55 °C	DO-214AA	SiC (Silicon Carbide) Schottky	42 pF
GeneSiC Semiconductor GAP3SLT33-214	Surface Mount	10 µA	DO-214AA SMB	2.2 V	3300 V	300 mA	175 °C	-55 °C	DO-214AA	SiC (Silicon Carbide) Schottky	42 pF
GeneSiC Semiconductor GAP3SLT33-220FP	Through Hole	5 µA	TO-220-2 Full Pack	1.7 V	3300 V	300 mA	175 °C	-55 °C	TO-220FP	SiC (Silicon Carbide) Schottky	42 pF