IXYK200N65B3 Series

IGBT DISCRETE TO-264K

Catalog

IGBT DISCRETE TO-264K

Part	Input Type	Package Name	Test Condition Voltage	Test Condition Voltage (Secondary)	Test Condition Current	Test Condition Resistance	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Switching Energy (Off)	Switching Energy (On)	Vce(on) (Max)	Current - Collector (Ic) (Max)	Td (on) @ 25°C	Td (off) @ 25°C	Operating Temperature (Min)	Operating Temperature (Max)	Current - Collector Pulsed (Icm)	Power - Max	Gate Charge	Reverse Recovery Time (trr)	Package / Case
LITTELFUSE IXYK200N65B3	Standard	TO-264	400 V	15 V	100 A	0 Ohm	Through Hole	650 V	4 mJ	5 mJ	1.7 V	410 A	60 ns	370 ns	-55 °C	175 °C	1100 A	1.56 kW	340 nC	108 ns	TO-264-3 TO-264AA

Catalog

IGBT DISCRETE TO-264K

Description

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements