DMP3097L Series

P-Channel Enhancement Mode MOSFET

Catalog

P-Channel Enhancement Mode MOSFET

Part	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Package / Case
Diodes Inc DMP3097L-13	65 mOhm	-55 °C	150 °C	SOT-23-3	13.4 nC	P-Channel	Surface Mount	3.9 A	MOSFET (Metal Oxide)	2.1 V	563 pF	4.5 V 10 V	20 V	30 V	1 W	SC-59 SOT-23-3 TO-236-3

Catalog

P-Channel Enhancement Mode MOSFET

Key Features

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS Compliant

• Halogen- and Antimony-Free. "Green" Device

• For automotive applications requiring specific change control(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, andmanufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.