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N-Channel Enhancement Mode MOSFET
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N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET
| Part | Technology | Vgs (Max) | Vgs(th) (Max) @ Id [Max] | Rds On (Max) @ Id, Vgs | Package / Case | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Supplier Device Package | Mounting Type | FET Type | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | MOSFET (Metal Oxide) | 20 V | 2.2 V | 38 mOhm | SC-59 SOT-23-3 TO-236-3 | 30 V | 4.5 V 10 V | -55 °C | 150 °C | 5.8 A | 700 mW | SOT-23-3 | Surface Mount | N-Channel | |
Diodes Inc | MOSFET (Metal Oxide) | 20 V | 2.2 V | 38 mOhm | SOT-23-6 | 30 V | 4.5 V 10 V | -55 °C | 150 °C | 4 A | SOT-26 | Surface Mount | N-Channel | 900 mW |