GBPC3502 Series
Manufacturer: GeneSiC Semiconductor
BRIDGE RECT 1P 200V 35A GBPC-W
| Part | Diode Type | Package / Case | Mounting Type | Voltage - Peak Reverse (Max) | Voltage - Forward (Vf) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Current - Reverse Leakage | Current - Average Rectified (Io) | Technology | Package Name |
|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Single Phase | 4-Square GBPC-W | Through Hole | 200 V | 1.1 V 1.1 V | -55 °C | 150 °C | 5 µA | 35 A | Standard | GBPC-W |
GeneSiC Semiconductor | Single Phase | 4-Square GBPC-T | QC Terminal | 200 V | 1.1 V 1.1 V | -55 °C | 150 °C | 5 µA | 35 A | Standard | GBPC-T |
GeneSiC Semiconductor | Single Phase | 4-Square GBPC-T | QC Terminal | 200 V | 1.1 V 1.1 V | -55 °C | 150 °C | 5 µA | 35 A | Standard | GBPC-T |
GeneSiC Semiconductor | Single Phase | 4-Square GBPC-W | Through Hole | 200 V | 1.1 V 1.1 V | -55 °C | 150 °C | 5 µA | 35 A | Standard | GBPC-W |