DMP31D7LVQ Series

Dual P-Channel Enhancement Mode MOSFET

Catalog

Dual P-Channel Enhancement Mode MOSFET

Part	Gate Charge (Max)	Vgs(th) (Max)	Package Name	Input Capacitance (Ciss) (Max)	Rds On (Max)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Channel Count	Configuration	Configuration - Features	Grade	Power - Max (Ta)	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) (Ta)	Qualification	Mounting Type
Diodes Inc DMP31D7LVQ-7	0.8 nC 0.8 nC	2.6 V	SOT-563	19 pF	900 mOhm	SOT-563 SOT-666	-55 °C	150 °C	2	P-Channel	Dual	Automotive	500 mW	30 V	MOSFET (Metal Oxide)	620 mA	AEC-Q101	Surface Mount
Diodes Inc DMP31D7LVQ-13	0.8 nC 0.8 nC	2.6 V	SOT-563	19 pF	900 mOhm	SOT-563 SOT-666	-55 °C	150 °C	2	P-Channel	Dual	Automotive	500 mW	30 V	MOSFET (Metal Oxide)	620 mA	AEC-Q101	Surface Mount

Catalog

Dual P-Channel Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• TheDIODES™DMP31D7LVQissuitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.