DMN2029UVT Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
Diodes Inc DMN2029UVT-7	SOT-23-6 Thin TSOT-23-6	20 V	-55 °C	150 °C	7.1 nC	N-Channel	10 V	1.5 V	24 mOhm	MOSFET (Metal Oxide)	Surface Mount	2.5 V 4.5 V	700 mW	646 pF

Catalog

N-Channel Enhancement Mode MOSFET

Key Features

• Low Input Capacitance

• Low On-Resistance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.