SST39WF400B Series

4Mb 1.65-1.95V Parallel Flash

Catalog

4Mb 1.65-1.95V Parallel Flash

Part	Supplier Device Package	Memory Type	Memory Size	Memory Interface	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Access Time	Voltage - Supply [Max]	Voltage - Supply [Min]	Memory Organization	Mounting Type	Write Cycle Time - Word, Page	Memory Format
Microchip Technology SST39WF400B-70-4C-MAQE-T	48-WFBGA (6x4)	Non-Volatile	512 kb	Parallel	FLASH	70 °C	0 °C	48-WFBGA	70 ns	1.95 V	1.65 V	256 K	Surface Mount	40 µs	FLASH
Microchip Technology SST39WF400B-70-4I-B3KE-T	48-TFBGA	Non-Volatile	512 kb	Parallel	FLASH	85 °C	-40 °C	48-TFBGA	70 ns	1.95 V	1.65 V	256 K	Surface Mount	40 µs	FLASH
Microchip Technology SST39WF400B-70-4C-B3KE	48-TFBGA	Non-Volatile	512 kb	Parallel	FLASH	70 °C	0 °C	48-TFBGA	70 ns	1.95 V	1.65 V	256 K	Surface Mount	40 µs	FLASH
Microchip Technology SST39WF400B-70-4C-MAQE	48-WFBGA (6x4)	Non-Volatile	512 kb	Parallel	FLASH	70 °C	0 °C	48-WFBGA	70 ns	1.95 V	1.65 V	256 K	Surface Mount	40 µs	FLASH
Microchip Technology SST39WF400B-70-4I-MAQE	48-WFBGA (6x4)	Non-Volatile	512 kb	Parallel	FLASH	85 °C	-40 °C	48-WFBGA	70 ns	1.95 V	1.65 V	256 K	Surface Mount	40 µs	FLASH
Microchip Technology SST39WF400B-70-4I-MAQE-T	48-WFBGA (6x4)	Non-Volatile	512 kb	Parallel	FLASH	85 °C	-40 °C	48-WFBGA	70 ns	1.95 V	1.65 V	256 K	Surface Mount	40 µs	FLASH

Catalog

4Mb 1.65-1.95V Parallel Flash

Key Features

• + Organized as 256K x16

• + Low Power Consumption: Active Current: 5 mA (typical),

• Standby Current: 5 µA (typical)

• + Sector-Erase Capability: Uniform 2 KWord sectors

• + Block-Erase Capability: Uniform 32 KWord blocks

• + Fast Erase and Word-Program – Sector-Erase Time: 36 ms

• (typical), Block-Erase Time: 36 ms (typical),

• Chip-Erase Time: 140 ms (typical), Word-Program Time:

• 28 µs (typical)

• + Packages Available:48-ball TFBGA (6mm x 8mm), 48-ball

• WFBGA (4mm x 6mm), 48-ball XFLGA (4mm x 6mm)

• + All non-Pb (lead-free) devices are RoHS compliant

Description

The SST39WF400B is a 256K x16 CMOS Multi-Purpose Flash (MPF) manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared to alternate approaches. The SST39WF400B writes (Program or Erase) with a 1.65-1.95V power supply. This device conforms to JEDEC standard pin assignments for x16 memories.