Catalog
600V 15A TO-3PF, Low-noise Power MOSFET
Description
AI
R6015ENZ is a power MOSFET with low ON-resistance and fast switching, suitable for the switching application.
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600V 15A TO-3PF, Low-noise Power MOSFET
600V 15A TO-3PF, Low-noise Power MOSFET
| Part | Drain to Source Voltage (Vdss) | Gate Charge (Max) | Operating Temperature | Package / Case | Vgs (Max) | Current - Continuous Drain (Id) (Tc) | Package Name | Rds On (Max) | Power Dissipation (Max) | Technology | FET Type | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) | Vgs(th) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 600 V | 27.5 nC | 150 °C | TO-3P-3 Full Pack | 20 V | 15 A | TO-3PF | 290 mOhm | 60 W | MOSFET (Metal Oxide) | N-Channel | Through Hole | 10 V | 1050 pF | 5 V |
 Rohm Semiconductor | 600 V | 40 nC | 150 °C | TO-3P-3 Full Pack | 20 V | 15 A | TO-3PF | 290 mOhm | 120 W | MOSFET (Metal Oxide) | N-Channel | Through Hole | 10 V | 910 pF | 4 V |
 Rohm Semiconductor | 600 V | 40 nC | 150 °C | TO-220-3 Full Pack | 20 V | 15 A | TO-220FM | 290 mOhm | 40 W | MOSFET (Metal Oxide) | N-Channel | Through Hole | 10 V | 910 pF | 4 V |