STW11 Series

N-channel 1000 V, 1.10 Ohm typ. 8.3 A SuperMESH Power MOSFET in a TO-247 package

Catalog

N-channel 1000 V, 1.10 Ohm typ. 8.3 A SuperMESH Power MOSFET in a TO-247 package

Part	FET Type	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STW11NK100Z	N-Channel	4.5 V	30 V	TO-247-3	230 W	162 nC	1.38 Ohm	Through Hole	MOSFET (Metal Oxide)	10 V	3500 pF	TO-247-3	-55 °C	150 °C	1000 V	8.3 A

Catalog

N-channel 1000 V, 1.10 Ohm typ. 8.3 A SuperMESH Power MOSFET in a TO-247 package

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.