Beta
⌘K
MOSFET N-CH 1000V 10A TO268
| Part | Technology | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs | Mounting Type | Vgs (Max) | FET Type | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | MOSFET (Metal Oxide) | 1000 V | 300 W | 1.2 Ohm | Surface Mount | 20 V | N-Channel | TO-268AA | 10 V | 4000 pF | 155 nC | -55 °C | 150 °C | 10 A | 4.5 V | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA |