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MOSFET N-CH 30V 30A TO252-3
| Part | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Mounting Type | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Technology | FET Type | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | PG-TO252-3-11 | 30 A | 60 W | Surface Mount | 30 V | -55 °C | 175 ░C | 4.5 V 10 V | 2 V | 20 mOhm | 700 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | N-Channel | 20 V | 11 nC |
Infineon Technologies | PG-TO252-3 | 30 A | 42 W | Surface Mount | 30 V | -55 °C | 175 ░C | 4.5 V 10 V | 2 V | 20 mOhm | 695 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | N-Channel | 20 V |