MURTA600 Series
Manufacturer: GeneSiC Semiconductor
DIODE MODULE GP 400V 300A 3TOWER
| Part | Package Name | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Current - Reverse Leakage | Diode Pair Count | Diode Configuration | Mounting Type | Package / Case | Reverse Recovery Time (trr) | Current - Average Rectified (Io) (per Diode) | Technology | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) | Speed | Speed - Recovery Current | Speed - Recovery Time |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Three Tower | 150 °C | -55 °C | 25 µA | 1 pair | Common Cathode | Chassis Mount | Three Tower | 220 ns | 300 A | Standard | 500 ns | 200 mA | 400 V | 1.5 V | |||
GeneSiC Semiconductor | Three Tower | 150 °C | -55 °C | 25 µA | 1 pair | Common Anode | Chassis Mount | Three Tower | 300 A | Standard | 200 mA 500 ns | 1200 V | 2.6 V | Standard Recovery | 200 mA 200 mA | 500 ns | ||
GeneSiC Semiconductor | Three Tower | 150 °C | -55 °C | 25 µA | 1 pair | Common Anode | Chassis Mount | Three Tower | 200 ns | 300 A | Standard | 500 ns | 200 mA | 200 V | 1.3 V | |||
GeneSiC Semiconductor | Three Tower | 150 °C | -55 °C | 25 µA | 1 pair | Common Anode | Chassis Mount | Three Tower | 220 ns | 300 A | Standard | 500 ns | 200 mA | 400 V | 1.5 V | |||
GeneSiC Semiconductor | Three Tower | 150 °C | -55 °C | 25 µA | 1 pair | Common Anode | Chassis Mount | Three Tower | 220 ns | 300 A | Standard | 500 ns | 200 mA | 400 V | 1.5 V | |||
GeneSiC Semiconductor | Three Tower | 150 °C | -55 °C | 25 µA | 1 pair | Common Cathode | Chassis Mount | Three Tower | 220 ns | 300 A | Standard | 500 ns | 200 mA | 400 V | 1.5 V | |||
GeneSiC Semiconductor | Three Tower | 150 °C | -55 °C | 25 µA | 1 pair | Common Cathode | Chassis Mount | Three Tower | 200 ns | 300 A | Standard | 500 ns | 200 mA | 200 V | 1.3 V | |||
GeneSiC Semiconductor | Three Tower | 150 °C | -55 °C | 25 µA | 1 pair | Common Anode | Chassis Mount | Three Tower | 200 ns | 300 A | Standard | 500 ns | 200 mA | 200 V | 1.3 V | |||
GeneSiC Semiconductor | Three Tower | 150 °C | -55 °C | 25 µA | 1 pair | Common Cathode | Chassis Mount | Three Tower | 280 ns | 300 A | Standard | 500 ns | 200 mA | 600 V | 1.7 V | |||
GeneSiC Semiconductor | Three Tower | 150 °C | -55 °C | 25 µA | 1 pair | Common Cathode | Chassis Mount | Three Tower | 200 ns | 300 A | Standard | 500 ns | 200 mA | 200 V | 1.3 V |