Catalog
1200V, 10A, THD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching . (2-pin package)
Beta
⌘K
1200V, 10A, THD, Silicon-carbide (SiC) SBD
1200V, 10A, THD, Silicon-carbide (SiC) SBD
| Part | Technology | Mounting Type | Package / Case | Current - Average Rectified (Io) | Capacitance | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) | Reverse Recovery Time (trr) | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Current - Reverse Leakage | Package Name | Voltage - DC Reverse (Vr) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | SiC (Silicon Carbide) Schottky | Through Hole | TO-220-2 | 10 A | 550 pF | 175 °C | 1.6 V | 0 ns | 500 mA | No Recovery Time | 500 mA 500 mA | 200 µA | TO-220ACFP | 1200 V |