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60 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, P-channel Trench MOSFET
60 V, P-channel Trench MOSFET
| Part | Power Dissipation (Max) | Technology | Operating Temperature (Min) | Operating Temperature (Max) | Current - Continuous Drain (Id) (Ta) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Qualification | Rds On (Max) | Grade | Input Capacitance (Ciss) (Max) | Vgs (Max) | Drain to Source Voltage (Vdss) | FET Type | Mounting Type | Package Name | Vgs(th) (Max) | Gate Charge (Max) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 7.5 W 660 mW | MOSFET (Metal Oxide) | -55 °C | 175 °C | 2.5 A | 10 V | 4.5 V | AEC-Q101 | 130 mOhm | Automotive | 616 pF | 20 V | 60 V | P-Channel | Surface Mount | 6-TSOP | 3.2 V | 17 nC | SC-74 SOT-457 |