DMP6018LPS Series

60V P-Channel Enhancement Mode MOSFET

Catalog

60V P-Channel Enhancement Mode MOSFET

Part	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)
Diodes Inc DMP6018LPS-13	2.6 W 113 W	60 V	60 A	2.5 V	8-PowerTDFN	13.7 nC	MOSFET (Metal Oxide)	PowerDI5060-8	3505 pF	-55 °C	150 °C	20 V	18 mOhm	P-Channel	Surface Mount	4.5 V 10 V

Catalog

60V P-Channel Enhancement Mode MOSFET

Key Features

• 100% Unclamped Inductive Switch (UIS) Test in Production

• Low RDS(ON) – Minimizes On State Losses

• Low Input Capacitance

• Fast Switching Speed

• Lead-Free Finish; RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• For automotive applications requiring specific change control(i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, andmanufactured in IATF 16949 certified facilities), please referto the related automotive grade (Q-suffix) part. A listing canbe found athttps://www.diodes.com/products/automotive.

• This part is qualified to JEDEC standards (as references inAEC-Q) for High Reliability.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.