DMTH8028LFVWQ Series

80V 175°C N-Channel Enhancement Mode MOSFET PowerDI3333-8

Catalog

80V 175°C N-Channel Enhancement Mode MOSFET PowerDI3333-8

Part	Mounting Type	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Package / Case	Qualification	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Grade
Diodes Inc DMTH8028LFVWQ-13	Surface Mount Wettable Flank	2.5 V	N-Channel	25 mOhm	MOSFET (Metal Oxide)	-55 °C	175 ░C	1.5 W	80 V	8-PowerVDFN	AEC-Q101	10.4 nC	20 V	PowerDI3333-8 (SWP) Type UX	27 A	4.5 V 10 V	631 pF	Automotive

Catalog

80V 175°C N-Channel Enhancement Mode MOSFET PowerDI3333-8

Key Features

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• Small Form Factor Thermally Efficient Package Enables Higher Density End Products

• Wettable Flank for Improved Optical Inspection

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DMTH8028LFVWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in: backlighting, power-management functions, and DC-DC converters.