1200V, 50A, SOT-227, Dual mSiC™ Diode
1200V, 50A, SOT-227, Dual mSiC™ Diode
| Part | Technology | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Package Name | Mounting Type | Package / Case | Current - Reverse Leakage | Diode Count | Diode Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Microchip Technology | SiC (Silicon Carbide) Schottky | 0 ns | 700 V | 50 A | 1.8 V | 500 mA | No Recovery Time | 500 mA 500 mA | 175 °C | -55 °C | SOT-227 (ISOTOP®) | Chassis Mount | miniBLOC SOT-227-4 | 200 µA | 2 | Independent |
Microchip Technology | SiC (Silicon Carbide) Schottky | 0 ns | 1200 V | 50 A | 1.8 V | 500 mA | No Recovery Time | 500 mA 500 mA | 175 °C | -55 °C | SOT-227 (ISOTOP®) | Chassis Mount | miniBLOC SOT-227-4 | 200 µA | 2 | Independent |