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650V 20A TO-263, Low-noise Power MOSFET
Description
AI
R6520ENJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
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650V 20A TO-263, Low-noise Power MOSFET
650V 20A TO-263, Low-noise Power MOSFET
| Part | Package Name | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) | Gate Charge (Max) | Vgs (Max) | Mounting Type | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) (Tc) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Rds On (Max) | Technology | Package / Case | FET Type | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | LPTS | 10 V | 4 V | 61 nC | 20 V | Surface Mount | 1400 pF | 20 A | 650 V | 231 W | 205 mOhm | MOSFET (Metal Oxide) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | N-Channel | 150 °C |