N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET
| Part | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Package / Case | Drain to Source Voltage (Vdss) | FET Type | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | Surface Mount | 6 V 10 V | 4 V | 1 A | 750 mOhm | 770 mW | 231 pF | 20 V | SC-59 SOT-23-3 TO-236-3 | 130 V | N-Channel | SOT-23-3 | -55 °C | 150 °C | MOSFET (Metal Oxide) | 5.6 nC |