Beta
⌘K
NPN X 2 BRT Q1BSR=4.7KOHM Q1BER=
| Part | Power - Max [Max] | Transistor Type | Mounting Type | Package / Case | Current - Collector Cutoff (Max) [Max] | Resistor - Base (R1) | Current - Collector (Ic) (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Supplier Device Package | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 100 mW | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | Surface Mount | SOT-553 | 100 nA | 4.7 kOhms | 100 mA | 50 V | ESV | 120 | 250 MHz | 300 mV |