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MOSFET P-CH 20V 4A SOT23F
| Part | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Technology | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Package / Case | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Supplier Device Package | Vgs (Max) | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | P-Channel | 10.4 nC | 20 V | MOSFET (Metal Oxide) | 630 pF | 1.5 V 4.5 V | Surface Mount | SOT-23-3 Flat Leads | 55 mOhm | 1 W | SOT-23F | 8 V | 150 °C | 4 A | 1 V |