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30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Drain to Source Voltage (Vdss) | FET Type | Package / Case | Vgs(th) (Max) | Technology | Mounting Type | Input Capacitance (Ciss) (Max) | Gate Charge (Max) | Package Name | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Operating Temperature (Min) | Operating Temperature (Max) | Rds On (Max) | Current - Continuous Drain (Id) (Ta) | Power Dissipation (Max) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 30 V | N-Channel | 3-XFDFN | 950 mV | MOSFET (Metal Oxide) | Surface Mount | 30.3 pF | 0.4 nC | DFN0606-3 | 4.5 V | 1.5 V | -55 °C | 150 °C | 670 mOhm | 770 mA | 2.8 W 380 mW | 8 V |
 Nexperia USA Inc. | 20 V | P-Channel | 3-XFDFN | 950 mV | MOSFET (Metal Oxide) | Surface Mount | 54.8 pF | 0.9 nC 0.9 nC | DFN0606-3 | 4.5 V | 1.8 V | -55 °C | 150 °C | 640 mOhm | 800 mA | 2.23 W 360 mW | 8 V |