DIODE SIL CARB 650V 3A TO263-2
| Part | Voltage - DC Reverse (Vr) (Max) [Max] | Capacitance @ Vr, F | Speed | Supplier Device Package | Voltage - Forward (Vf) (Max) @ If | Mounting Type | Technology | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Package / Case | Current - Reverse Leakage @ Vr | Reverse Recovery Time (trr) | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 650 V | 100 pF | No Recovery Time | PG-TO263-2 | 1.8 V | Surface Mount | SiC (Silicon Carbide) Schottky | 175 ░C | -55 C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 500 µA | 0 ns | 3 A |