IC NVSRAM 256KBIT PAR 28EDIP
Part | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Technology | Package / Case | Package / Case | Package / Case | Mounting Type | Memory Format | Access Time | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Memory Organization | Memory Type | Voltage - Supply [Max] | Voltage - Supply [Min] | Memory Interface | Memory Size | Write Cycle Time - Word, Page |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Integrated DS1230W-100+ | 70 °C | 0 °C | 28-EDIP | NVSRAM (Non-Volatile SRAM) | 0.6 in | 28-DIP Module | 15.24 mm | Through Hole | NVSRAM | 100 ns | 100 ns | 100 ns | 32K x 8 | Non-Volatile | 3.6 V | 3 V | Parallel | 32 KB | |
Analog Devices Inc./Maxim Integrated DS1230WP-150 | 70 °C | 0 °C | 34-PowerCap Module | NVSRAM (Non-Volatile SRAM) | 34-PowerCap™ Module | Surface Mount | NVSRAM | 150 ns | 32K x 8 | Non-Volatile | 3.6 V | 3 V | Parallel | 32 KB | 150 ns | ||||
Analog Devices Inc./Maxim Integrated DS1230W-100 | 70 °C | 0 °C | 28-EDIP | NVSRAM (Non-Volatile SRAM) | 0.6 in | 28-DIP Module | 15.24 mm | Through Hole | NVSRAM | 100 ns | 100 ns | 100 ns | 32K x 8 | Non-Volatile | 3.6 V | 3 V | Parallel | 32 KB | |
Analog Devices Inc./Maxim Integrated DS1230WP-150+ | 70 °C | 0 °C | 34-PowerCap Module | NVSRAM (Non-Volatile SRAM) | 34-PowerCap™ Module | Surface Mount | NVSRAM | 150 ns | 32K x 8 | Non-Volatile | 3.6 V | 3 V | Parallel | 32 KB | 150 ns | ||||
Analog Devices Inc./Maxim Integrated DS1230W-100IND+ | 85 °C | -40 °C | 28-EDIP | NVSRAM (Non-Volatile SRAM) | 0.6 in | 28-DIP Module | 15.24 mm | Through Hole | NVSRAM | 100 ns | 100 ns | 100 ns | 32K x 8 | Non-Volatile | 3.6 V | 3 V | Parallel | 32 KB | |
Analog Devices Inc./Maxim Integrated DS1230W-150 | 70 °C | 0 °C | 28-EDIP | NVSRAM (Non-Volatile SRAM) | 0.6 in | 28-DIP Module | 15.24 mm | Through Hole | NVSRAM | 150 ns | 32K x 8 | Non-Volatile | 3.6 V | 3 V | Parallel | 32 KB | 150 ns | ||
Analog Devices Inc./Maxim Integrated DS1230W-150+ | 70 °C | 0 °C | 28-EDIP | NVSRAM (Non-Volatile SRAM) | 0.6 in | 28-DIP Module | 15.24 mm | Through Hole | NVSRAM | 150 ns | 32K x 8 | Non-Volatile | 3.6 V | 3 V | Parallel | 32 KB | 150 ns | ||
Analog Devices Inc./Maxim Integrated DS1230W-100IND | 85 °C | -40 °C | 28-EDIP | NVSRAM (Non-Volatile SRAM) | 0.6 in | 28-DIP Module | 15.24 mm | Through Hole | NVSRAM | 100 ns | 100 ns | 100 ns | 32K x 8 | Non-Volatile | 3.6 V | 3 V | Parallel | 32 KB |