IPC100 Series

Catalog

INFINEON’S IPC100N04S5-1R2 MOSFET FOR EFFICIENT POWER MANAGEMENT, HIGH PERFORMANCE, AND RELIABILITY. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

Part	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Qualification	Mounting Type	Package / Case	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Grade	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IPC100N04S51R2ATMA1	40 V	MOSFET (Metal Oxide)	131 nC	-55 °C	175 ░C	7650 pF	PG-TDSON-8-34	100 A	3.4 V	AEC-Q101	Surface Mount	8-PowerTDFN	150 W	1.2 mOhm	N-Channel	20 V	Automotive
Infineon Technologies IPC100N04S5L1R5ATMA1	40 V	MOSFET (Metal Oxide)		-55 °C	175 ░C	5340 pF	PG-TDSON-8-34	100 A	2 V		Surface Mount	8-PowerTDFN	115 W	1.5 mOhm	N-Channel	16 V		4.5 V 10 V	95 nC
Infineon Technologies IPC100N04S5L1R1ATMA1	40 V	MOSFET (Metal Oxide)	140 nC	-55 °C	175 ░C	8250 pF	PG-TDSON-8-34	100 A	2 V	AEC-Q101	Surface Mount	8-PowerTDFN	150 W	1.1 mOhm	N-Channel	16 V	Automotive	4.5 V 10 V
Infineon Technologies IPC100N04S5L2R6ATMA1	40 V	MOSFET (Metal Oxide)		-55 °C	175 ░C	2925 pF	PG-TDSON-8-34	100 A	2 V	AEC-Q101	Surface Mount	8-PowerTDFN	75 W	2.6 mOhm	N-Channel	16 V	Automotive	4.5 V 10 V	55 nC
Infineon Technologies IPC100N04S5L1R9ATMA1	40 V	MOSFET (Metal Oxide)		-55 °C	175 ░C	4310 pF	PG-TDSON-8-34	100 A	2 V		Surface Mount	8-PowerTDFN		1.9 mOhm	N-Channel	16 V		4.5 V 10 V	81 nC	100 W
Infineon Technologies IPC100N04S52R8ATMA1	40 V	MOSFET (Metal Oxide)	45 nC	-55 °C	175 ░C	2600 pF	PG-TDSON-8-34	100 A	3.4 V		Surface Mount	8-PowerTDFN	75 W		N-Channel	20 V					2.8 mOhm