IRF89 Series

Catalog

MOSFET 2N-CH 20V 8.9A 8SO

Part	Power - Max [Max]	Drain to Source Voltage (Vdss)	FET Feature	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IRF8915	2 W	20 V	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	Surface Mount	8-SO	MOSFET (Metal Oxide)	-55 °C	150 °C	18.3 mOhm	7.4 nC	2.5 V	540 pF	8.9 A	2 N-Channel (Dual)
Infineon Technologies IRF8910GPBF	2 W	20 V	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	Surface Mount	8-SO	MOSFET (Metal Oxide)	-55 °C	150 °C	13.4 mOhm		2.55 V	960 pF	10 A	2 N-Channel (Dual)	11 nC
Infineon Technologies IRF8910TRPBF-1	2 W	20 V		8-SOIC	3.9 mm	0.154 in	Surface Mount	8-SO	MOSFET (Metal Oxide)	-55 °C	150 °C	13.4 mOhm		2.55 V	960 pF	10 A	2 N-Channel (Dual)	11 nC
Infineon Technologies IRF8910TRPBF	2 W	20 V	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	Surface Mount	8-SO	MOSFET (Metal Oxide)	-55 °C	150 °C	13.4 mOhm		2.55 V	960 pF	10 A	2 N-Channel (Dual)	11 nC
Infineon Technologies IRF8910PBF	2 W	20 V	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	Surface Mount	8-SO	MOSFET (Metal Oxide)	-55 °C	150 °C	13.4 mOhm		2.55 V	960 pF	10 A	2 N-Channel (Dual)	11 nC