IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 14 MOHM;
| Part | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | FET Type | Power Dissipation (Max) [Max] | Package / Case | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 14 mOhm | 140 nC | D2PAK | N-Channel | 190 W | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 100 V | -55 °C | 175 ░C | Surface Mount | 4 V | 3550 pF | 73 A | MOSFET (Metal Oxide) | 10 V | 20 V |