SST39VF3201C Series

32Mb 2.7-3.6V Parallel Flash

Catalog

32Mb 2.7-3.6V Parallel Flash

Part	Operating Temperature [Max]	Operating Temperature [Min]	Access Time	Memory Organization	Memory Interface	Technology	Memory Format	Voltage - Supply [Min]	Voltage - Supply [Max]	Mounting Type	Memory Size	Write Cycle Time - Word, Page	Memory Type	Supplier Device Package	Package / Case	Qualification	Grade	Package / Case [y]	Package / Case [y]
Microchip Technology SST39VF3201C-70-4I-B3KE	85 °C	-40 °C	70 ns	2 M	Parallel	FLASH	FLASH	2.7 V	3.6 V	Surface Mount	32 Gbit	10 µs	Non-Volatile	48-TFBGA (6x8)	48-TFBGA
Microchip Technology SST39VF3201C-70-4I-B3KE-T-VAO	85 °C	-40 °C	70 ns	2 M	Parallel	FLASH	FLASH	2.7 V	3.6 V	Surface Mount	32 Gbit	10 µs	Non-Volatile	48-TFBGA (6x8)	48-TFBGA	AEC-Q100	Automotive
Microchip Technology SST39VF3201C-70-4I-EKE	85 °C	-40 °C	70 ns	2 M	Parallel	FLASH	FLASH	2.7 V	3.6 V	Surface Mount	32 Gbit	10 µs	Non-Volatile	48-TSOP	48-TFSOP			18.4 mm	0.724 in
Microchip Technology SST39VF3201C-70-4I-EKE-T	85 °C	-40 °C	70 ns	2 M	Parallel	FLASH	FLASH	2.7 V	3.6 V	Surface Mount	32 Gbit	10 µs	Non-Volatile	48-TSOP	48-TFSOP			18.4 mm	0.724 in
Microchip Technology SST39VF3201C-70-4I-B3KE-T	85 °C	-40 °C	70 ns	2 M	Parallel	FLASH	FLASH	2.7 V	3.6 V	Surface Mount	32 Gbit	10 µs	Non-Volatile	48-TFBGA (6x8)	48-TFBGA

Catalog

32Mb 2.7-3.6V Parallel Flash

Key Features

• + Organized as 2M x16

• + Low Power Consumption (typical values at 5 MHz)

• – Active Current: 6 mA (typical)

• – Standby Current: 4 µA (typical)

• – Auto Low Power Mode: 4 µA (typical)

• + Hardware Block-Protection/WP# Input Pin

• – Top Block-Protection (top two 4-KWord blocks)

• for SST39VF3202C

• – Bottom Block-Protection (bottom two 4-KWord

• blocks) for SST39VF3201C

• + Sector-Erase Capability

• – Uniform 2 KWord sectors

• + Block-Erase Capability

• – Flexible block architecture

• – Eight 4-KWord blocks, 63 32-KWord blocks

• + Chip-Erase Capability

• + Erase-Suspend/Erase-Resume Capabilities

• + Hardware Reset Pin (RST#)

• + Security-ID Feature

• – SST: 128 bits; User: 128 words

• + Fast Erase and Word-Program:

• – Sector-Erase Time: 18 ms (typical)

• – Block-Erase Time: 18 ms (typical)

• – Chip-Erase Time: 35 ms (typical)

• – Word-Program Time: 7 µs (typical)

• + Packages Available

• – 48-lead TSOP (12mm x 20mm)

• – 48-ball TFBGA (6mm x 8mm)

• + All non-Pb (lead-free) devices are RoHS compliant

Description

The SST39VF3201C is 2M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF3201C write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pin assignments for x16 memories.