DMT69M8LSS Series

NRND = Not Recommended for New Design

Catalog

NRND = Not Recommended for New Design

Part	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)
Diodes Inc DMT69M8LSS-13	Surface Mount	MOSFET (Metal Oxide)	60 V	8-SOIC	3.9 mm	0.154 in	8-SO	-55 °C	150 °C	2 V	1.25 W	1925 pF	16 V	33.5 nC	N-Channel	9.8 A	4.5 V 10 V

Catalog

NRND = Not Recommended for New Design

Key Features

• 100% Unclamped Inductive Switch (UIS) Test in Production

• High Conversion Efficiency

• Low RDS(ON)– Ensures On-State Losses Are Minimized

• Excellent QGDx RDS(ON)Product (FOM)

• Advanced Technology for DC-DC Converters

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.