CNY17 Series

Catalog

OPTOISO 5KV TRANS W/BASE 6DIP

Part	Vce Saturation (Max)	Voltage - Isolation	Current - Output / Channel	Operating Temperature (Min)	Operating Temperature (Max)	Output Type	Mounting Type	Voltage - Forward (Vf) (Typ)	Package Name	Current Transfer Ratio (Max)	Current - DC Forward (If) (Max)	Number of Channels	Input Type	Voltage - Output (Max)	Rise Time (Typ)	Fall Time (Typ)	Package Length	Package Width	Current Transfer Ratio (Min)	Package / Case
Broadcom Limited CNY17-1-060E	300 mV	5000 Vrms	150 mA	-55 °C	100 °C	Transistor with Base	Through Hole	1.4 V	6-DIP	80 %	60 mA	1	DC	70 V	5 µs	5 µs	0.3 in	7.62 mm	40 %
Broadcom Limited CNY17-2-300E	300 mV	5000 Vrms	150 mA	-55 °C	100 °C	Transistor with Base	Surface Mount	1.4 V	6-SMD	125 %	60 mA	1	DC	70 V	5 µs	5 µs			63 %	6-SMD Gull Wing
Broadcom Limited CNY17-2-360E	300 mV	5000 Vrms	150 mA	-55 °C	100 °C	Transistor with Base	Surface Mount	1.4 V	6-SMD	125 %	60 mA	1	DC	70 V	5 µs	5 µs			63 %	6-SMD Gull Wing
Broadcom Limited CNY17-2-W60E	300 mV	5000 Vrms	150 mA	-55 °C	100 °C	Transistor with Base	Through Hole	1.4 V	6-DIP	125 %	60 mA	1	DC	70 V	5 µs	5 µs	10.16 mm	10.16 mm	63 %
Broadcom Limited CNY17-1-560E	300 mV	5000 Vrms	150 mA	-55 °C	100 °C	Transistor with Base	Surface Mount	1.4 V	6-SMD	80 %	60 mA	1	DC	70 V	5 µs	5 µs			40 %	6-SMD Gull Wing
Broadcom Limited CNY17-3-560E	300 mV	5000 Vrms	150 mA	-55 °C	100 °C	Transistor with Base	Surface Mount	1.4 V	6-SMD	200 %	60 mA	1	DC	70 V	5 µs	5 µs			100 %	6-SMD Gull Wing
Broadcom Limited CNY17-3-500E	300 mV	5000 Vrms	150 mA	-55 °C	100 °C	Transistor with Base	Surface Mount	1.4 V	6-DIP Gull Wing	200 %	60 mA	1	DC	70 V	5 µs	5 µs			100 %	6-SMD Gull Wing
Broadcom Limited CNY17-4-060E	300 mV	5000 Vrms	150 mA	-55 °C	100 °C	Transistor with Base	Through Hole	1.4 V	6-DIP	320 %	60 mA	1	DC	70 V	5 µs	5 µs	0.3 in	7.62 mm	160 %
Broadcom Limited CNY17-4-560E	300 mV	5000 Vrms	150 mA	-55 °C	100 °C	Transistor with Base	Surface Mount	1.4 V	6-SMD	320 %	60 mA	1	DC	70 V	5 µs	5 µs			160 %	6-SMD Gull Wing
Broadcom Limited CNY17-2-W00E	300 mV	5000 Vrms	150 mA	-55 °C	100 °C	Transistor with Base	Through Hole	1.4 V	6-DIP	125 %	60 mA	1	DC	70 V	5 µs	5 µs	10.16 mm	10.16 mm	63 %