IPP60R280 Series

Catalog

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 280 MOHM; PRICE/PERFORMANCE

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology	Supplier Device Package	Vgs (Max)	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IPP60R280P7XKSA1	4 V	53 W	12 A	600 V	18 nC	280 mOhm	-55 °C	150 °C	10 V	TO-220-3	MOSFET (Metal Oxide)	PG-TO220-3	20 V	Through Hole	N-Channel
Infineon Technologies IPP60R280E6XKSA1	3.5 V	104 W	13.8 A	600 V		280 mOhm	-55 °C	150 °C	10 V	TO-220-3	MOSFET (Metal Oxide)	PG-TO220-3	20 V	Through Hole	N-Channel	43 nC	950 pF
Infineon Technologies IPP60R280CFD7XKSA1		52 W	9 A	650 V	18 nC	280 mOhm	-55 °C	150 °C	10 V	TO-220-3	MOSFET (Metal Oxide)	PG-TO220-3	20 V	Through Hole	N-Channel			4.5 V	807 pF