DMT36M1LPS Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)
Diodes Inc DMT36M1LPS-13	1155 pF	PowerDI5060-8	6 mOhm	4.5 V 10 V	65 A	8-PowerTDFN	-55 °C	150 °C	20 V	16.7 nC	2.6 W	Surface Mount	N-Channel	3 V	MOSFET (Metal Oxide)	30 V

Catalog

N-Channel Enhancement Mode MOSFET

Key Features

• Low RDS(ON)– Minimizes On-State Losses

• Excellent QGDx RDS(ON)Product (FOM)

• Advanced Technology for DC-DC Converters

• Small Form Factor Thermally Efficient Package Enables Higher Density End Products

• 100% Unclamped Inductive Switching – Ensures More Reliability

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.