IPP80P Series

Catalog

MOSFET P-CH 30V 80A TO220-3

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Supplier Device Package	Package / Case	Qualification	Vgs(th) (Max) @ Id	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max) [Max]	Vgs (Max) [Min]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IPP80P03P405AKSA1	-55 °C	175 ░C	20 V	10300 pF	MOSFET (Metal Oxide)	30 V	P-Channel	5 mOhm	137 W	PG-TO220-3-1	TO-220-3	AEC-Q101	4 V	Through Hole	10 V	130 nC	Automotive
Infineon Technologies IPP80P04P4L06AKSA1	-55 °C	175 ░C			MOSFET (Metal Oxide)	40 V	P-Channel	6.7 mOhm		PG-TO220-3-1	TO-220-3	AEC-Q101	2.2 V	Through Hole	4.5 V 10 V		Automotive	6580 pF	5 V	-16 V	88 W	104 nC
Infineon Technologies IPP80P03P4L07AKSA1	-55 °C	175 ░C		5700 pF	MOSFET (Metal Oxide)	30 V	P-Channel	7.2 mOhm		PG-TO220-3-1	TO-220-3		2 V	Through Hole	4.5 V 10 V				5 V	-16 V	88 W	80 nC
Infineon Technologies IPP80P04P4L08AKSA1	-55 °C	175 ░C		5430 pF	MOSFET (Metal Oxide)	40 V	P-Channel		75 W	PG-TO220-3-1	TO-220-3	AEC-Q101	2.2 V	Through Hole	4.5 V 10 V		Automotive		5 V	-16 V		92 nC	8.2 mOhm