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MOSFET N-CH 20V 2A UF6
| Part | Supplier Device Package | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Package / Case | FET Type | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs | Mounting Type | Operating Temperature | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | UF6 | MOSFET (Metal Oxide) | 2 A | 4 V | 1.5 V | 10 V | 195 pF | 3.4 nC | 20 V | 6-SMD Flat Leads | N-Channel | 500 mW | 126 mOhm | Surface Mount | 150 °C | 1 V |