DMT6006LK3 Series

60V N-Channel Enhancement Mode MOSFET

Catalog

60V N-Channel Enhancement Mode MOSFET

Part	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	FET Type
Diodes Inc DMT6006LK3-13	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	3.1 W 89.3 W	34.9 nC	4.5 V 10 V	2162 pF	60 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	88 A	20 V	2.5 V	6.5 mOhm	TO-252 (DPAK)	N-Channel

Catalog

60V N-Channel Enhancement Mode MOSFET

Key Features

• 100% Unclamped Inductive Switching (UIS) Test in Production –

• Ensures More Reliable and Robust End Application

• Low RDS(ON) – Minimizes Power Losses

• Low Qg –Minimizes Switching Losses

• Lead-Free Finish; RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• For automotive applications requiring specific change control(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, andmanufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, which makes it ideal for high-efficiency power management applications.