DMG1012UWQ Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	Vgs(th) (Max) @ Id	FET Type	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Qualification	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Grade
Diodes Inc DMG1012T-13	1 V	N-Channel	MOSFET (Metal Oxide)	SOT-523	400 mOhm	SOT-523	1.8 V 4.5 V	0.74 nC	6 V	60.67 pF	20 V	280 mW	-55 °C	150 °C	Surface Mount	630 mA
Diodes Inc DMG1012UWQ-7	1 V	N-Channel	MOSFET (Metal Oxide)	SC-70 SOT-323	450 mOhm	SOT-323	1.8 V 4.5 V		6 V	43 pF	20 V		-55 °C	150 °C	Surface Mount	950 mA	AEC-Q101	1 nC	460 mW	Automotive

Catalog

N-Channel Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• The DMG1012UWQ is suitable for automotive applicationsrequiring specific change control; this part is AEC-Q101qualified, PPAP capable, and manufactured in IATF 16949certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.