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DIODE GEN PURP 600V 4A DO201AD
| Part | Reverse Recovery Time (trr) | Package / Case | Technology | Current - Reverse Leakage @ Vr | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Speed | Supplier Device Package | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 35 ns | DO-201AD Axial | Standard | 5 µA | 150 °C | -55 °C | 80 pF | 600 V | Through Hole | 200 mA 500 ns | DO-201AD | 1.7 V | 4 A |