MOSFET N-CH 600V 26A TO264AA
| Part | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Supplier Device Package | Technology | FET Type | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Mounting Type | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 200 nC | 360 W | TO-264AA (IXFK) | MOSFET (Metal Oxide) | N-Channel | 26 A | 250 mOhm | 20 V | 10 V | 5100 pF | 600 V | Through Hole | TO-264-3 TO-264AA | -55 °C | 150 °C | 4.5 V | ||
IXYS | TO-264AA (IXFK) | MOSFET (Metal Oxide) | N-Channel | 26 A | 300 mOhm | 20 V | 10 V | 10800 pF | 900 V | Through Hole | TO-264-3 TO-264AA | -55 °C | 150 °C | 5 V | 240 nC | 560 W |