DMT6009LK3 Series

60V N-Channel Enhancement Mode MOSFET

Catalog

60V N-Channel Enhancement Mode MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Package / Case [y]	Package / Case [x]
Diodes Inc DMT6009LK3-13	13.3 A 57 A	2 V	Surface Mount	16 V	2.6 W	N-Channel	10 mOhm	60 V	-55 °C	150 °C	TO-252-3	33.5 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V 10 V	1925 pF	MOSFET (Metal Oxide)
Diodes Inc DMT6009LJ3	74.5 A	2 V	Through Hole	16 V	2.9 W 83.3 W	N-Channel	10 mOhm	60 V	-55 °C	150 °C	TO-251 (Type TH)	33.5 nC	IPAK TO-251-3 Short Leads TO-251AA	4.5 V 10 V	1925 pF	MOSFET (Metal Oxide)
Diodes Inc DMT6009LSS-13	10.8 A	2 V	Surface Mount	20 V	1.25 W	N-Channel	9.5 mOhm	60 V	-55 °C	150 °C	8-SO	33.5 nC	8-SOIC	4.5 V 10 V	1925 pF	MOSFET (Metal Oxide)	3.9 mm	0.154 in

Catalog

60V N-Channel Enhancement Mode MOSFET

Key Features

• 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application

• Low RDS(ON)—Ensures On State Losses Are Minimized

• Excellent Qgd x RDS(ON) Product (FOM)

• Advanced Technology for DC-DC Converters

• Small Form Factor Thermally Efficient Package Enables Higher Density End Products

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.