Beta
⌘K
MOSFET N-CH 650V 3.9A TO252-3
| Part | Mounting Type | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Technology | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 10 V | MOSFET (Metal Oxide) | 650 V | 36.7 W | 950 mOhm | N-Channel | -55 °C | 150 °C | PG-TO252-3 | 3.9 A | 14.1 nC | 20 V | 380 pF | 4.5 V |