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20V Dual P-Channel Enhancement Mode MOSFET
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20V Dual P-Channel Enhancement Mode MOSFET
20V Dual P-Channel Enhancement Mode MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Configuration | Supplier Device Package | Power - Max [Max] | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Mounting Type | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 8.8 nC | MOSFET (Metal Oxide) | 2 P-Channel | U-DFN2020-6 (Type B) | 700 mW | 6-UDFN Exposed Pad | -55 °C | 150 °C | 75 mOhm | 3.8 A | 20 V | Surface Mount | 1.4 V |