DMTH8008LFGQ Series

80V +175°C N-Channel Enhancement Mode MOSFET

Catalog

80V +175°C N-Channel Enhancement Mode MOSFET

Part	Technology	Grade	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs(th) (Max) @ Id [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
Diodes Inc DMTH8008LFGQ-7	MOSFET (Metal Oxide)	Automotive	Surface Mount	2254 pF	AEC-Q101	6.9 mOhm	8-PowerVDFN	20 V	37.7 nC	N-Channel	2.5 V	4.5 V 10 V	1.2 W 50 W	-55 °C	175 ░C	80 V	17 A 70 A	POWERDI3333-8

Catalog

80V +175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• Low RDS(ON) – Ensures On-State Losses are Minimized

• Excellent Qgd×RDS(ON)Product (FOM)

• Advanced Technology for DC-DC Converters

• Small Form Factor Thermally Efficient Package Enables Higher Density End Products

• Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DMTH8008LFGQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: backlighting, power-management functions, and DC-DC converters.