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P-CHANNEL SMALL SIGNAL MOSFET 100 V ; SOT-223 PACKAGE; 900 MOHM;
| Part | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Package / Case | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs (Max) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET (Metal Oxide) | 12 nC | P-Channel | TO-261-4 TO-261AA | 4 V | 1.8 W | Surface Mount | -55 °C | 150 °C | 980 mA | 900 mOhm | 20 V | PG-SOT223-4 | 10 V | 100 V |