DIODE GEN PURP 200V 100MA USC
| Part | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Package / Case | Current - Average Rectified (Io) | Operating Temperature - Junction | Technology | Mounting Type | Speed | Speed | Reverse Recovery Time (trr) | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage 1SS403,H3F | USC | 200 V | 1 µA | SC-76, SOD-323 | 100 mA | 125 °C | Standard | Surface Mount | Any Speed | 200 mA | 60 ns | 3 pF |